RW1E015RP

RW1E015RP Pch -30V -1.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 30V 160mW -1.5A 0.7W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (WEMT6). 4) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline WEMT6 SOT-563T (6) (5) (4) (1) (2) (3) lInner circuit (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 8,000 T2R UJ Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value -30 1.5 6 20 0.7 0.4 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/11 2013.02 - Rev.B RW1E015RP lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 179 °C/W - - 313 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Values Min. Typ. Max. Unit -30 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C Zero gate voltage drain current Gate - Source leakage curr...