RT1E040RP

RT1E040RP Pch -30V -4A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD -30V 45mW -4A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). 4) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline TSST8 (8) (7) (6) (5) (1) (2) (3) (4) lInner circuit (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 3,000 TR UG Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value -30 4 16 20 1.25 0.55 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.09 - Rev.B RT1E040RP lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 100 °C/W - - 227 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Values Min. Typ. Max. Unit -30 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C Zero gate voltage drain current Gate - ...