Document
RRR015P03
Pch -30V -1.5A Power MOSFET
VDSS RDS(on) (Max.)
ID PD
-30V 160mW -1.5A 1.0W
lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT3
SOT-346T
lInner circuit
Datasheet
(1) (2)
(3)
(1) Gate (2) Source (3) Drain
*1 ESD PROTECTION DIODE *2 BODY DIODE
lApplication DC/DC converters
lAbsolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature
lPackaging specifications Packaging Reel size (mm) Tape width (mm)
Type Basic ordering unit (pcs) Taping code Marking
Taping 180 8 3,000 TL UJ
Symbol
VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg
Value -30 1.5 6 20 1.0 0.54 150 -55 to +150
Unit V A A V W W °C °C
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.09 - Rev.B
RRR015P03 lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3 RthJA *4
Values Min. Typ. Max.
Unit
- - 125 °C/W
- - 231 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = -1mA
Values Min. Typ. Max.
Unit
-30 - - V
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C
- -25 - mV/°C
Zero gate voltage drain current
IDSS VDS = -30V, VGS = 0V
-
- -1 mA
Gate - Source leakage current
IGSS VGS = 20V, VDS = 0V
-
- 10 mA
Gate threshold voltage
VGS (th) VDS = -10V, ID = -1mA -1.0 - -2.5 V
Gate threshold voltage temperature coefficient
ΔV(GS)th ID= -1mA ΔTj referenced to 25°C
- 3.9 - mV/°C
Static drain - source on - state resistance
Gate input resistannce Transconductance
VGS= -10V, ID= -1.5A
-
115 160
RDS(on) *5
VGS= -4.5V, ID= -0.7A VGS= -4.0V, ID= -0.7A
-
170 240 mW
190 270
VGS= -10V, ID= -1.5A, Tj=125°C
-
175 245
RG gfs *5
f = 1MHz, open drain VDS= -10V, ID= -1.5A
1.2
20 3.0
-
W S
*1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm) *4 Mounted on a FR4 (12×20×0.8mm) *5 Pulsed
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.09 - Rev.B
RRR015P03
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Input capacitance
Ciss VGS = 0V
- 230 -
Output capacitance
Coss VDS = -10V
- 40 -
Reverse transfer capacitance
Crss f = 1MHz
- 33 -
Turn - on delay time
td(on) *5 VDD ⋍ -15V, VGS = -10V
-
12
-
Rise time
tr *5 ID = -0.7A
-8-
Turn - off delay time
td(off) *5 RL = 21.4W
- 40 -
Fall time
tf *5 RG = 10W
- 13 -
Unit pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Total gate charge
VDD ⋍ -15V, ID= -1.5A VGS = -5V
-
3.2
-
Qg *5
VDD ⋍ -15V, ID= -1.5A VGS = -10V
-
6.5
-
Gate - Source charge Gate - Dr.