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RRR015P03 Dataheets PDF



Part Number RRR015P03
Manufacturers Rohm
Logo Rohm
Description MOSFET
Datasheet RRR015P03 DatasheetRRR015P03 Datasheet (PDF)

RRR015P03 Pch -30V -1.5A Power MOSFET VDSS RDS(on) (Max.) ID PD -30V 160mW -1.5A 1.0W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant lOutline TSMT3 SOT-346T lInner circuit Datasheet (1) (2) (3) (1) Gate (2) Source (3) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current.

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RRR015P03 Pch -30V -1.5A Power MOSFET VDSS RDS(on) (Max.) ID PD -30V 160mW -1.5A 1.0W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant lOutline TSMT3 SOT-346T lInner circuit Datasheet (1) (2) (3) (1) Gate (2) Source (3) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 3,000 TL UJ Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value -30 1.5 6 20 1.0 0.54 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.09 - Rev.B RRR015P03 lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 125 °C/W - - 231 °C/W lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Values Min. Typ. Max. Unit -30 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C - -25 - mV/°C Zero gate voltage drain current IDSS VDS = -30V, VGS = 0V - - -1 mA Gate - Source leakage current IGSS VGS = 20V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = -10V, ID = -1mA -1.0 - -2.5 V Gate threshold voltage temperature coefficient ΔV(GS)th ID= -1mA ΔTj referenced to 25°C - 3.9 - mV/°C Static drain - source on - state resistance Gate input resistannce Transconductance VGS= -10V, ID= -1.5A - 115 160 RDS(on) *5 VGS= -4.5V, ID= -0.7A VGS= -4.0V, ID= -0.7A - 170 240 mW 190 270 VGS= -10V, ID= -1.5A, Tj=125°C - 175 245 RG gfs *5 f = 1MHz, open drain VDS= -10V, ID= -1.5A 1.2 20 3.0 - W S *1 Limited only by maximum temperature allowed. *2 Pw  10ms, Duty cycle  1% *3 Mounted on a ceramic board (30×30×0.8mm) *4 Mounted on a FR4 (12×20×0.8mm) *5 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/11 2012.09 - Rev.B RRR015P03 Data Sheet lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 230 - Output capacitance Coss VDS = -10V - 40 - Reverse transfer capacitance Crss f = 1MHz - 33 - Turn - on delay time td(on) *5 VDD ⋍ -15V, VGS = -10V - 12 - Rise time tr *5 ID = -0.7A -8- Turn - off delay time td(off) *5 RL = 21.4W - 40 - Fall time tf *5 RG = 10W - 13 - Unit pF ns lGate Charge characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge VDD ⋍ -15V, ID= -1.5A VGS = -5V - 3.2 - Qg *5 VDD ⋍ -15V, ID= -1.5A VGS = -10V - 6.5 - Gate - Source charge Gate - Dr.


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