RTQ045N03

Transistors 2.5V Drive Nch MOS FET RTQ045N03 RTQ045N03 zStructure Silicon N-channel MOS FET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6) . zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm) TSMT6 SOT-457T 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark (1) (2) (3) 0.4 0~0.1 0.16 Each lead has same dimensions Abbreviated symbol : QM zPackaging specifications Package Type Code Basic ordering unit (pieces) RTQ045N03 Taping TR 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±4.5 ±18 1.0 4.0 1.25 150 −55~+150 Unit V V A A A A W °C °C zEquivalent circuit (6) (5) (4) (6) (5) (4) ∗2 (1) (2) (3) ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a) ∗ Limits 100 U...