QS6K1

Transistors 2.5V Drive Nch+Nch MOS FET QS6K1 QS6K1 zStructure Silicon N-channel MOS FET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6). zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm) TSMT6 SOT-457 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark (1) (2) (3) 0.4 0~0.1 0.16 Each lead has same dimensions Abbreviated symbol : K01 zPackaging specifications Type QS6K1 Package Code Basic ordering unit (pieces) Taping TR 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±1.0 ±4.0 0.8 4.0 1.25 0.9 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C zEquivalent circuit (6) (5) (4) (6) (5) (4) ∗2 ∗2 (1) (2) (3) ∗1 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Source (6) Tr1 Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zThermal resista...