RSQ035N03

Transistors 4V Drive Nch MOS FET RSQ035N03 RSQ035N03 zStructure Silicon N-channel MOS FET zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). zApplications Switching zExternal dimensions (Unit : mm) TSMT6 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark (1) (2) (3) 0~0.1 0.4 0.16 Each lead has same dimensions Abbreviated symbol : QN zPackaging specifications Package Type Code Basic ordering unit (pieces) RSQ035N03 Taping TR 3000 zInner circuit (6) (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (3) (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 20 ±3.5 ±14 1.0 14 1.25 150 −55 to +150 zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 100 Unit V V A A A A W °C °C Unit °C/W 1/2 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS (on)∗ Forward transfer...