SFT1341

Ordering number : ENA1444B SFT1341 Power MOSFET –40V, 112mΩ, –10A, Single P-Channel Features Low On-Resistance Low Gate Charge ESD Diode-Protected Gate High Speed Switching Low Gate Drive Voltage Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted Symbol RθJC RθJA Value –40 ±10 –10 –40 1.0 15 150 −55 to +150 Unit V V A A W W °C °C Value 8.33 125 Unit °C/W http://onsemi.com Electrical Connection P-Channel 2, 4 1 Packing Type:TL 3 Marking T1341 LOT No. TL 4 1 2 IPAK(TP) 3 4 2 1 3 DPAK(TP-FA) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 September, 2014 91014 TKIM TC-00003148/60612 TKIM/40809PA MSIM TC-00001932 No.A1444-1/6 Electrical Characteristics at Ta = 25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leak...