QS5U34

Transistors 1.8V Drive Nch+SBD MOSFET QS5U34 QS5U34 zStructure Silicon N-channel MOSFET Schottky Barrier DIODE zFeatures 1) The QS5U34 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (1.8V). 4) The Independently connected Schottky barrier diode has low forward voltage. zApplications Load switch, DC / DC conversion zDimensions (Unit : mm) TSMT5 2.9 1.9 0.95 0.95 (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 (1) (2) (3) 0.4 0~0.1 0.16 Each lead has same dimensions Abbreviated symbol : U34 zPackaging specifications Package Type Code Basic ordering unit (pieces) QS5U34 Taping TR 3000 zEquivalent circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (1)Gate (2)Source (3) (3)Anode (4)Cathode (5)Drain 1/4 Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed ID IDP ∗1 Source current (Body diode) Continuous Pulsed IS ISP ∗1 Channel temperature Tch Power dissipation PD ∗3 Limits 20 10 ±1.5 ±3.0 0.6 2.4 150 0.9 Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation VRM VR IF IFSM ∗2 Tj PD ∗3 30 20 0.5 2.0 150 0.7 Total power dissipation PD ∗3 1.25 Range of Storage temperature Tstg −55 to +150 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz1cyc. ∗3...