RP1E100RP

4V Drive Pch MOSFET RP1E100RP  Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High power package. 3) 4V drive.  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E100RP Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 30 20 10 40 1.6 40 2.0 Channel temperature Tch 150 Range of storage temperature Tstg 55 to +150 Unit V V A A A A W C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Limits Rth (ch-a)* 62.5 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.B RP1E100RP  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage IGSS V(BR)DSS IDSS VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time...