4V Drive Pch+Pch MOSFET
4V Drive Pch+Pch MOSFET
SH8J65
Structure Silicon P-channel MOSFET
Features 1) Low On-resistance. 2) Built-in G-S Prot...
Description
4V Drive Pch+Pch MOSFET
SH8J65
Structure Silicon P-channel MOSFET
Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
Application Switching
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Type
Package Code Basic ordering unit (pieces)
SH8J65
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Total power dissipation
Continuous Pulsed Continuous Pulsed
Channel temperature
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1
PD ∗2
Tch Tstg
Limits −30 ±20 ±7.0 ±28 −1.6 −28 2.0 1.4 150 −55 to +150
Unit V V A A A A
W / TOTAL W / ELEMENT
°C °C
Inner circuit
(8) (7) (6)
(5)
∗2 ∗2
∗1 ∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(4)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
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1/5
2011.10 - Rev.B
SH8J65
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate...
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