4V Drive Pch+Pch MOSFET
4V Drive Pch+Pch MOSFET
SH8J66
Structure Silicon P-channel MOSFET
Dimensions (Unit : mm)
SOP8
Features 1) Low On-r...
Description
4V Drive Pch+Pch MOSFET
SH8J66
Structure Silicon P-channel MOSFET
Dimensions (Unit : mm)
SOP8
Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
Applications Switching
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8J66
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1
PD ∗2
Tch Tstg
Limits −30 ±20 ±9 ±36 −1.6 −36 2.0 1.4 150 −55 to +150
Unit V V A A A A
W / TOTAL W / ELEMENT
°C °C
Inner circuit
(8) (7) (6)
(5)
∗2 ∗2
∗1 ∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(4)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
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1/5
2010.01 - Rev.A
SH8J66
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate th...
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