STD16NF06

STD16NF06 N-Channel 60V - 0.060Ω - 16A - DPAK STripFET™ II Power MOSFET General features Type STD16NF06 VDSS 60V RDS(on) <0.070Ω ID 16A ■ Typical RDS(on) = 0.060Ω ■ Exceptional dv/dt Capability ■ 100% Avalanche Tested ■ Application Oriented Characterization Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility Applications ■ Audio Amplifiers ■ Power Tools ■ Automotive Environment 1 DPAK TO-252 3 Internal schematic diagram Order codes Part Number STD16NF06T4 January 2006 Marking D16NF06 Package TO-252 Packaging TAPE & REEL Rev 1 1/11 www.st.com 11 1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS VDGR VGS ID ID IDM Note 4 PTOT Drain-source Voltage (VGS = 0V) Drain-gate Voltage (RGS = 20 kΩ) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor dv/dt EAS TJ Tstg Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Table 2. RthJC RthJA Tl Thermal data Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max Maximum Lead Temperature For Solder...