ATP107

Ordering number : ENA1603A ATP107 P-Channel Power MOSFET –40V, –50A, 17mΩ, Single ATPAK http://onsemi.com Features Low ON-resistance Slim package Halogen free compliance Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--10V, L=200μH, IAV=--25A *2 L≤200μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --40 ±20 --50 --150 50 150 --55 to +150 80 --25 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP107-TL-H 4.6 2.6 0.4 Product & Package Information Package : ATPAK JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP107 LOT No. TL 6.05 0.7 4.6 1.7 7.3 0.5 9.5 0.5 0.1 2 1 0.8 3 0.6 2.3 2.3 0.55 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK Electrical Connection 4,2 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 ...