ATP613

Ordering number : ENA1903A ATP613 N-Channel Power MOSFET 500V, 5.5A, 2Ω, ATPAK http://onsemi.com Features Reverse recovery time trr=60ns(typ.) Input Capacitance Ciss=350pF(typ.) Halogen free compliance ON-resistance RDS(on)=1.55Ω(typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Source-to-Drain Diode Forward Current (DC) Source-to-Drain Diode Forward Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP IS ISP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=99V, L=5mH, IAV=5.5A (Fig.1) *2 L≤5mH, Single pulse Conditions PW≤10μs, duty cycle≤1% PW≤10μs, duty cycle≤1% Tc=25°C Ratings 500 ±30 5.5 19 5.5 19 70 150 --55 to +150 93 5.5 Unit V V A A A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7057-001 6.5 4 1.5 0.4 ATP613-TL-H 4.6 2.6 0.4 Product & Package Information Package : ATPAK JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking ATP613 LOT No. TL 6.05 0.7 4.6 1.7 7.3 0.5 9.5 0.5 0.1 2 1 0.8 3 0.6 2.3 ...