Document
STDLED624, STFILED624, STPLED624, STULED624
N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages
Datasheet − preliminary data
Features
TAB 3
Order codes VDS
RDS(on) max
ID PTOT
1
DPAK
t(s)TAB roduc3
2 1
te PTO-220
123
I²PAKFP
TAB
IPAK
3
2 1
oleFigure 1. Internal schematic diagram bsD(2,TAB)
STDLED624 STFILED624 STPLED624 STULED624
620 V
2.5 Ω
4.0 A
45 W 20 W
45 W
• 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery
characteristics • Zener-protected
ct(s) - OG(1) olete ProduS(3)
AM01476v1
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low onresistance, superior dynamic performance and high avalanche capability, making them suitable for the buck-boost and flyback topology.
Obs Table 1. Device summary
Order codes
Marking
Package
Packaging
STDLED624 STFILED624 STPLED624
LED624
DPAK I2PAKFP (TO-281)
TO-220
Tape and reel Tube
STULED624
IPAK
March 2013
DocID024407 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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www.st.com
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Contents
Contents
STDLED624, STFILED624, STPLED624, STULED624
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
......................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
)4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 ct(s5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Obsolete Product(s) - Obsolete Produ6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/22 DocID024407 Rev 1
STDLED624, STFILED624, STPLED624, STULED624
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK, IPAK
I2PAKFP
TO-220
Unit
VDS Drain-source voltage (VGS = 0)
620 V
VGS Gate- source voltage
± 30 V
ID
)ID t(sIDM (2) ducPTOT
Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor
ProESD tedv/dt (3)
Gate-source human body model (C = 100 pF, R = 1.5 kΩ)
Peak diode recovery voltage slope
bsoleVISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; TC = 25 °C)
- OTstg Storage temperature )Tj Max. operating junction temperature t(s1. Limited by package. c2. Pulse width limited by safe operating area. du3. ISD ≤ 2.7 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
4.0 2.5 14 45 0.36
4.0 (1) 2.5 (1) 14(1)
20 0.16
2.5
9
4.0 2.5
14
45 0.36
2500
-55 to 150 150
A A A W W/°C kV V/ns
V
°C °C
te ProSymbol
Table 3. Thermal data
Parameter
TO-220 DPAK IPAK I2PAKFP Unit
oleRthj-case Thermal resistance junction-case max bs Rthj-pcb(1) Thermal resistance junction-pcb max O Rthj-amb Thermal resistance junction-amb max
2.78 50 62.5
6.25 °C/W °C/W
62.5 °C/W
1. When mounted on 1 inch² FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Symbol
Parameter
Max. value
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
Single pulse avalanche energy EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
2.7 100
Unit A mJ
DocID024407 Rev 1
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Electrical characteristics
STDLED624, STFILED624, STPLED624, STULED624
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown voltage
ID = 1 mA, VGS = 0
620
V
IDSS
t(s)IGSS cVGS(th) roduRDS(on)
Zero gate voltage
VDS = 620 V
drain current (VGS = 0) VDS = 620 V, TC=125 °C
Gate-body leakage current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source onresistance
VGS = 10 V, ID = 1.4 A
1 µA 50 µA
± 10 µA
3 3.6 4.5 V 2.2 2.5 Ω
olete PSymbol
Parameter
Obsgfs (1)
Forward transconductance
t(s) -Ciss
Coss
ucCrss
Input capacitance Output capacitance Reverse transfer capacitance
rodCOSS
(1) eq
Equivalent output capacitance
te PRG
Intrinsic gate resistance
le Qg Total gate charge so Qgs Gate-source charge Ob Qgd Gate-drain charge
Table 6. Dynamic Test conditions
Min. Typ. Max. Unit
VDS = 15 V, ID = 1.4 A
- 2.1 - S
395 pF
VDS = 25 V, f = 1 MHz, VGS = 0 - 57 - pF 7 pF
VGS = 0, VDS = 0 to 496 V
f = 1 MHz open drain
VDD = 496 V, ID = 2.7 A, VGS = 10 V (see Figure 17)
- 33 - pF
- 10 - Ω
13.5 nC - 2.7 - nC
7.7 nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Symbol
P.