DatasheetsPDF.com

STFILED624 Dataheets PDF



Part Number STFILED624
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STFILED624 DatasheetSTFILED624 Datasheet (PDF)

STDLED624, STFILED624, STPLED624, STULED624 N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB 3 Order codes VDS RDS(on) max ID PTOT 1 DPAK t(s)TAB roduc3 2 1 te PTO-220 123 I²PAKFP TAB IPAK 3 2 1 oleFigure 1. Internal schematic diagram bsD(2,TAB) STDLED624 STFILED624 STPLED624 STULED624 620 V 2.5 Ω 4.0 A 45 W 20 W 45 W • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic c.

  STFILED624   STFILED624


Document
STDLED624, STFILED624, STPLED624, STULED624 N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB 3 Order codes VDS RDS(on) max ID PTOT 1 DPAK t(s)TAB roduc3 2 1 te PTO-220 123 I²PAKFP TAB IPAK 3 2 1 oleFigure 1. Internal schematic diagram bsD(2,TAB) STDLED624 STFILED624 STPLED624 STULED624 620 V 2.5 Ω 4.0 A 45 W 20 W 45 W • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected ct(s) - OG(1) olete ProduS(3) AM01476v1 Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior dynamic performance and high avalanche capability, making them suitable for the buck-boost and flyback topology. Obs Table 1. Device summary Order codes Marking Package Packaging STDLED624 STFILED624 STPLED624 LED624 DPAK I2PAKFP (TO-281) TO-220 Tape and reel Tube STULED624 IPAK March 2013 DocID024407 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/22 www.st.com 22 Contents Contents STDLED624, STFILED624, STPLED624, STULED624 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 )4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 ct(s5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Obsolete Product(s) - Obsolete Produ6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/22 DocID024407 Rev 1 STDLED624, STFILED624, STPLED624, STULED624 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value DPAK, IPAK I2PAKFP TO-220 Unit VDS Drain-source voltage (VGS = 0) 620 V VGS Gate- source voltage ± 30 V ID )ID t(sIDM (2) ducPTOT Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor ProESD tedv/dt (3) Gate-source human body model (C = 100 pF, R = 1.5 kΩ) Peak diode recovery voltage slope bsoleVISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) - OTstg Storage temperature )Tj Max. operating junction temperature t(s1. Limited by package. c2. Pulse width limited by safe operating area. du3. ISD ≤ 2.7 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS 4.0 2.5 14 45 0.36 4.0 (1) 2.5 (1) 14(1) 20 0.16 2.5 9 4.0 2.5 14 45 0.36 2500 -55 to 150 150 A A A W W/°C kV V/ns V °C °C te ProSymbol Table 3. Thermal data Parameter TO-220 DPAK IPAK I2PAKFP Unit oleRthj-case Thermal resistance junction-case max bs Rthj-pcb(1) Thermal resistance junction-pcb max O Rthj-amb Thermal resistance junction-amb max 2.78 50 62.5 6.25 °C/W °C/W 62.5 °C/W 1. When mounted on 1 inch² FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max. value IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 2.7 100 Unit A mJ DocID024407 Rev 1 3/22 Electrical characteristics STDLED624, STFILED624, STPLED624, STULED624 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 620 V IDSS t(s)IGSS cVGS(th) roduRDS(on) Zero gate voltage VDS = 620 V drain current (VGS = 0) VDS = 620 V, TC=125 °C Gate-body leakage current (VDS = 0) VGS = ± 20 V Gate threshold voltage VDS = VGS, ID = 50 µA Static drain-source onresistance VGS = 10 V, ID = 1.4 A 1 µA 50 µA ± 10 µA 3 3.6 4.5 V 2.2 2.5 Ω olete PSymbol Parameter Obsgfs (1) Forward transconductance t(s) -Ciss Coss ucCrss Input capacitance Output capacitance Reverse transfer capacitance rodCOSS (1) eq Equivalent output capacitance te PRG Intrinsic gate resistance le Qg Total gate charge so Qgs Gate-source charge Ob Qgd Gate-drain charge Table 6. Dynamic Test conditions Min. Typ. Max. Unit VDS = 15 V, ID = 1.4 A - 2.1 - S 395 pF VDS = 25 V, f = 1 MHz, VGS = 0 - 57 - pF 7 pF VGS = 0, VDS = 0 to 496 V f = 1 MHz open drain VDD = 496 V, ID = 2.7 A, VGS = 10 V (see Figure 17) - 33 - pF - 10 - Ω 13.5 nC - 2.7 - nC 7.7 nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol P.


STDLED624 STFILED624 STPLED624


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)