Document
NTMFS4854NS
Power MOSFET
25 V, 149 A, Single N−Channel, SO−8 FL
Features
• Accurate, Lossless Current Sensing • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
25
V
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VGS
±16
V
TA = 25°C
ID
24.4
A
TA = 85°C
17.6
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
2.31
W
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2)
Steady TA = 85°C
State
Power Dissipation
TA = 25°C
PD
RqJA (Note 2)
15.2
A
11
0.9
W
Continuous Drain Current RqJC (Note 1)
TC = 25°C
ID
149
A
TC = 85°C
107.5
Power Dissipation RqJC (Note 1)
TC = 25°C
PD
86.2
W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
298
A
Operating Junction and Storage Temperature
TJ, TSTG −55 to
°C
+150
Source Current (Body Diode) Drain to Source DV/DT
IS dV/dt
71
A
6
V/ns
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 20 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
EAS TL
200
mJ
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size.
www.onsemi.com
V(BR)DSS 25 V
RDS(ON) MAX 2.5 mW @ 10 V 3.9 mW @ 4.5 V
DRAIN
ID MAX 149 A 119 A
GATE
Kelvin
SENSE SOURCE
1
SO−8 FLAT LEAD CASE 506BQ
MARKING
DIAGRAM
D (Do Not Connect)
S
NC
S 4854NS SENSE
S AYWZZ KELVIN
G
K1
D (Do Not Connect)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4854NST1G SO−8 FL 1500 Tape / Reel (Pb−Free)
NTMFS4854NST3G SO−8 FL 5000 Tape / Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2017 − Rev. 2
Publication Order Number: NTMFS4854NS/D
NTMFS4854NS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient – Steady State (Note 3)
RqJA
Junction−to−Ambient – Steady State (Note )
RqJA
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size.
Value 1.45 54 138.7
Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF.