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NTMFS4854NS Dataheets PDF



Part Number NTMFS4854NS
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMFS4854NS DatasheetNTMFS4854NS Datasheet (PDF)

NTMFS4854NS Power MOSFET 25 V, 149 A, Single N−Channel, SO−8 FL Features • Accurate, Lossless Current Sensing • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source.

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NTMFS4854NS Power MOSFET 25 V, 149 A, Single N−Channel, SO−8 FL Features • Accurate, Lossless Current Sensing • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 25 V Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VGS ±16 V TA = 25°C ID 24.4 A TA = 85°C 17.6 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.31 W Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 85°C State Power Dissipation TA = 25°C PD RqJA (Note 2) 15.2 A 11 0.9 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 149 A TC = 85°C 107.5 Power Dissipation RqJC (Note 1) TC = 25°C PD 86.2 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 298 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C +150 Source Current (Body Diode) Drain to Source DV/DT IS dV/dt 71 A 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 20 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) EAS TL 200 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. www.onsemi.com V(BR)DSS 25 V RDS(ON) MAX 2.5 mW @ 10 V 3.9 mW @ 4.5 V DRAIN ID MAX 149 A 119 A GATE Kelvin SENSE SOURCE 1 SO−8 FLAT LEAD CASE 506BQ MARKING DIAGRAM D (Do Not Connect) S NC S 4854NS SENSE S AYWZZ KELVIN G K1 D (Do Not Connect) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping† NTMFS4854NST1G SO−8 FL 1500 Tape / Reel (Pb−Free) NTMFS4854NST3G SO−8 FL 5000 Tape / Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 1 May, 2017 − Rev. 2 Publication Order Number: NTMFS4854NS/D NTMFS4854NS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Junction−to−Case (Drain) RqJC Junction−to−Ambient – Steady State (Note 3) RqJA Junction−to−Ambient – Steady State (Note ) RqJA 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. Value 1.45 54 138.7 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min OFF.


7442 NTMFS4854NS CAT2300


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