Document
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages
Datasheet - production data
Features
TAB
3 1
D2PAK
3 2 1
TO-220FP
TAB
I2PAKFP (TO-281)
3 2 1
TO-220
Figure 1. Internal schematic diagram
'7$%
Order codes
STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3
VDS RDS(on) max
ID PTOT 150 W
650 V 1 Ω 10 A 35 W
150 W
• 100% avalanche tested • Extremely low on-resistance RDS(on) • Gate charge minimized • Very low intrinsic capacitances • Improved diode reverse recovery
characteristics
• Zener-protected
* 6
AM01476v1
Applications
• Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Order codes STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3
Table 1. Device summary
Marking
Package
D2PAK
10N65K3
TO-220FP I2PAKFP (TO-281)
TO-220
Packaging Tape and reel
Tube
August 2013
This is information on a product in full production.
DocID15732 Rev 4
1/21
www.st.com
Contents
Contents
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
TO-220FP I2PAKFP
D2PAK, TO-220
VDS VGS ID ID IDM (1) PTOT
IAR
EAS
dv/dt (3)
Drain source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed)
Total dissipation at TC = 25 °C Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) Single pulse avalanche energy (2)
Derating factor
Peak diode recovery voltage slope
650 ± 30 10 6.3 40 35 150
7.2
212 0.28
12
1.2
ESD
Gate-source human body model (R = 1.5 kΩ, C = 100 pF)
VISO
Tj Tstg
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V 3. ISD ≤ 10 A, di/dt = 100 A/µs, VPeak < V(BR)DSS
2.8 2500
-55 to 150
Unit
V V A A A W A mJ W/°C V/ns kV
V °C °C
Table 3. Thermal data
Symbol
Parameter
Value
D2PAK
TO-220FP I2PAKFP
TO-220
Unit
Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max
0.83 3.57 0.83 °C/W 62.5 °C/W
30 °C/W
DocID15732 Rev 4
3/21
21
Electrical characteristics
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states Test conditions
V(BR)DSS
Drain-source breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source onresistance
VGS = 10 V, ID = 3.6 A
Min. Typ. Max. Unit 650 V
1 µA 50 µA ±10 µA 3 4.5 V 0.75 1 Ω
Symbol
Parameter
Ciss Coss Crss
Coss eq.
RG Qg Qgs Qgd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0
VDS = 0 to 520 V, VGS = 0
f=1 MHz, ID=0
VDD = 520 V, ID = 7.2 A, VGS = 10 V (see Figure 18)
Min. -
Typ. 1180 125
Max. Unit - pF - pF
- 14 - pF
- 77 - pF
- 3 -Ω
- 42 - nC - 7.4 - nC - 23 - nC
Table 6. Switching times
Symbol
Parameter
Test conditions
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off-delay time Fall time
VDD = 310 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17)
Min. Typ. Max Unit
- 14.5 - ns
- 14
- ns
- 44
- ns
- 35
- ns
4/21 DocID15732 Rev 4
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Electrical characteristics
Table 7. Source drain diode
.