N-channel Power MOSFET
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, T...
Description
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages
Datasheet - production data
Features
TAB
3 1
D2PAK
3 2 1
TO-220FP
TAB
I2PAKFP (TO-281)
3 2 1
TO-220
Figure 1. Internal schematic diagram
'7$%
Order codes
STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3
VDS RDS(on) max
ID PTOT 150 W
650 V 1 Ω 10 A 35 W
150 W
100% avalanche tested Extremely low on-resistance RDS(on) Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery
characteristics
Zener-protected
*6
AM01476v1
Applications
Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Order codes STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3
Table 1. Device summary
Marking
Package
D2PAK
10N65K3
TO-220FP I2PAKFP (TO-281)
TO-220
Packaging Tape and reel
Tube
August 2013
This is information on a product in full production.
DocID15732 Rev 4
1/21
www.st.com
Contents
Contents
STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electr...
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