STP10N65K3

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB 3 1 D2PAK 3 2 1 TO-220FP TAB I2PAKFP (TO-281) 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% Order codes STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3 VDS RDS(on) max ID PTOT 150 W 650 V 1 Ω 10 A 35 W 150 W 100% avalanche tested Extremely low on-resistance RDS(on) Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected *6 AM01476v1 Applications Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Order codes STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3 Table 1. Device summary Marking Package D2PAK 10N65K3 TO-220FP I2PAKFP (TO-281) TO-220 Packaging Tape and reel Tube August 2013 This is information on a product in full production. DocID15732 Rev 4 1/21 www.st.com Contents Contents STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electr...