NTP5863N

NTP5863N N-Channel Power MOSFET 60 V, 97 A, 7.8 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) Continuous Drain Current Steady State TC = 25°C TC = 100°C Power Dissipation Steady TC = 25°C State VDSS VGS VGS ID PD 60 $20 30 97 68 150 Pulsed Drain Current tp = 10 ms Operating and Storage Temperature Range IDM TJ, Tstg 383 −55 to +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.1 mH, IL(pk) = 56 A) Peak Diode Recovery (dV/dt) IS EAS dV/dt 97 157 4.1 Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds) TL 260 Unit V V V A W A °C A mJ V/ns °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 1.0 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 36 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). http://onsemi.com V(BR)DSS 60 V R...