N-channel Power MOSFET
STF1N105K3, STFW1N105K3, STP1N105K3
N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™
Power MOSFET in TO-220FP, TO-3PF and T...
Description
STF1N105K3, STFW1N105K3, STP1N105K3
N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™
Power MOSFET in TO-220FP, TO-3PF and TO-220 packages
Datasheet — production data
Features
Order codes
VDS
RDS(on) max
ID PTOT
STF1N105K3 STFW1N105K3 1050 V STP1N105K3
11 Ω
20 W 1.4 A
60 W
■ Gate charge minimized ■ Extremely large avalanche performance ■ 100% avalanche tested ■ Very low intrinsic capacitance
TAB
3 2 1
TO-220FP
1
3 2 1
TO-3PF
3 2 1
TO-220
Applications
■ Switching applications
Figure 1. Internal schematic diagram
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
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6
Table 1. Device summary Order codes STF1N105K3
STFW1N105K3 STP1N105K3
Marking 1N105K3
Package TO-220FP
TO-3PF TO-220
$0Y
Packaging Tube
January 2013
This is information on a product in full production.
Doc ID 023509 Rev 2
1/18
www.st.com
18
Contents
Contents
STF1N105K3, STFW1N105K3, STP1N105K3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . ....
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