Document
STP105N3LL
N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™
Power MOSFET in a TO-220 package
Datasheet − production data
Features
TAB
3 2 1
TO-220
Order code STP105N3LL
VDS 30 V
RDS(on) max. ID 3.5 mΩ 150 A
• RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses
Figure 1. Internal schematic diagram
'Ć7$%
*
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
6
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Order code STP105N3LL
Table 1. Device summary
Marking
Packages
105N3LL
TO-220
Packaging Tube
April 2014
This is information on a product in full production.
DocID023976 Rev 2
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www.st.com
Contents
Contents
STP105N3LL
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STP105N3LL
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VDS Drain-source voltage
VGS Gate-source voltage
ID
Continuous drain current at TC = 25 °C (silicon limited)
ID
Continuous drain current at TC = 100 °C (silicon limited)
ID
Continuous drain current at TC = 25 °C (package limited)
(1)
IDM Pulsed drain current
PTOT Total dissipation at TC = 25 °C
Derating factor
(2)
EAS Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting Tj = 25°C, IAV = 40 A
30 ± 20 150
105
80 320 140 0.9 150 -55 to 175 175
Symbol
Table 3. Thermal data Parameter
Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max
Value 1.1 62.5
Unit V V A
A
A A W W/°C mJ °C °C
Unit °C/W °C/W
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13
Electrical characteristics
2 Electrical characteristics
STP105N3LL
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. Static Test conditions
Min. Typ. Max. Unit
Drain-source breakdown V(BR)DSS Voltage
Zero gate voltage drain IDSS current (VGS = 0)
IGSS VGS(th)
Gate body leakage current (VDS = 0) Gate threshold voltage
Static drain-source on-
RDS(on) resistance
ID = 250 μA, VGS= 0 VDS = 30 V VDS = 30 V, Tc = 125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 40 A
30 1
V
1 μA 10 μA
±100 nA
2.5 V 2.7 3.5 mΩ 3.5 4.5 mΩ
Symbol
Parameter
Ciss Coss
Crss
Qg Qgs Qgd
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Rg Gate input resistance
Table 5. Dynamic Test conditions
VDS = 25 V, f=1 MHz, VGS = 0
Min Typ. Max. Unit - 3500 - pF - 400 - pF
- 380 - pF
VDD = 15 V, ID = 80 A
VGS = 4.5 V Figure 14
- 42 - nC - 9 - nC - 18 - nC
f = 1 MHz, gate DC Bias = 0,
- 1 -Ω test signal level = 20 mV, ID = 0
Symbol
Table 6. Switching on/off (inductive load)
Parameter
Test conditions
Min. Typ.
Max. Unit
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V Figure 13
- 19 - 91 - 24.5 - 23.4
-
ns ns ns ns
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STP105N3LL
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
ISD
(1)
ISDM
(2)
VSD trr Qrr
Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge
IRRM Reverse recovery current
ISD = 40 A, VGS = 0
ISD = 80 A, di/dt = 100 A/μs, VDD = 24 V Figure 15
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Min. Typ. Max. Unit
- 80 A
- 320 A
- 1.1 V
- 28.6
ns
- 22.8
nC
- 1.6
A
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Electrical characteristics
STP105N3LL
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID (A)
100
OpLeimraittieodn
in by
tmhiasxaRreDaS(iosn)
10
1
AM18155v1
100µs 1ms 10ms 1s
0.1
0.01 0.1
Tj=175°C Tc=25°C Single pulse
1 10 VDS(V)
Figure 3. Thermal impedance
K δ=0.5
AM18156v1
0.2 0.1
10-1
0.05 0.02 0.01
Single pulse
c
10-2 10-5
10-4
10-3 10-2 10-1 100 tp(s)
Figure 4. Output characteristics
ID(A) 300
AM18157v1
3V VGS= 4, 5, 6, 7, 8, 9, 10V 2V
250
Figure 5. Transfer characteristics
ID (A)
VDS=1V 300
AM18158v1
250
200 200
150 150 100 100
50 1V
0 .