N-channel Power MOSFET
STL100N10F7
N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package
Data...
Description
STL100N10F7
N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2 3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code STL100N10F7
VDSS
RDS(on) max
ID
PTOT
100 V 0.0073 Ω 19 A 5 W
Ultra low on-resistance 100% avalanche tested
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
S(1, 2, 3)
12 34 Top View
AM15540v2
Order code STL100N10F7
Table 1. Device summary
Marking
Package
100N10F7
PowerFLAT™ 5x6
Packaging Tape and reel
July 2013
This is information on a product in full production.
DocID023656 Rev 4
1/16
www.st.com
16
Contents
Contents
STL100N10F7
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . ....
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