Document
STB15N65M5, STD15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK packages
Datasheet — production data
Features
Order codes
STB15N65M5 STD15N65M5
VDS @ TJmax
RDS(on) max
ID
710 V < 0.34 Ω 11 A
■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
TAB
2
1
D2PAK
3
TAB
3 1
DPAK
Figure 1. Internal schematic diagram
$ 4!"
' 3
!-V
Table 1. Device summary Order codes STB15N65M5 STD15N65M5
Marking 15N65M5
Package D2PAK DPAK
Packaging Tape and reel
November 2012
This is information on a product in full production.
Doc ID 023207 Rev 1
1/19
www.st.com
19
Contents
Contents
STB15N65M5, STD15N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
.......................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 023207 Rev 1
STB15N65M5, STD15N65M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (1) Peak diode recovery voltage slope
Tstg Storage temperature Tj Max. operating junction temperature
1. ISD ≤ 11 A, di/dt ≤400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID= IAR; VDD=50 V)
Value ± 25 11 6.9 44 85 15 - 55 to 150 150
Unit V A A A W
V/ns °C °C
Value
D2PAK
DPAK
1.47 30 50
Unit
°C/W °C/W
Value 2.5 160
Unit A mJ
Doc ID 023207 Rev 1
3/19
Electrical characteristics
2 Electrical characteristics
STB15N65M5, STD15N65M5
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source onresistance
VGS = 10 V, ID = 5.5 A
Min. Typ. Max. Unit
650 V 1 µA
100 µA ± 100 nA 3 4 5V 0.308 0.34 Ω
Table 6. Symbol
Dynamic Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Coss Crss
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 100 V, f = 1 MHz, VGS = 0
816 pF - 23 - pF
2.6 pF
Co(tr)(1) Co(er)(2)
Equivalent capacitance time related
Equivalent capacitance energy related
VDS = 0 to 520 V, VGS = 0
- 70 - pF - 21 - pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
- 5 -Ω
Qg Total gate charge
VDD = 520 V, ID = 5.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
22 nC - 5.5 - nC
11 nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS
4/19 Doc ID 023207 Rev 1
STB15N65M5, STD15N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(V) tr (V) tf (i) tc(off)
Voltage delay time Voltage rise time Current fall time Crossing time
Test conditions
VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22)
Min. Typ. Max. Unit
30 ns 8 ns -11 ns 12.5 ns
Table 8. Symbol
Source drain diode Parameter
Test conditions
Min. Typ. Max. Unit
ISD ISDM (1)
VSD (2)
Source-drain current Source-drain current (pulsed)
Forward on voltage
ISD = 11 A,.