Power MOSFET. STW19NM60N Datasheet

STW19NM60N MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STW19NM60N
STW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II
Power MOSFET in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
'
3
Order code
VDS
(@Tjmax)
STW19NM60N 650 V
RDS(on)
max.
ID PTOT
0.285 Ω 13 A 110 W
Designed for automotive applications and
AEC-Q101 qualified
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
!-V
Order codes
STW19NM60N
Table 1. Device summary
Marking
Package
19NM60N
TO-247
Packaging
Tube
October 2013
This is information on a product in full production.
DocID024392 Rev 2
1/13
www.st.com
13


STW19NM60N Datasheet
Recommendation STW19NM60N Datasheet
Part STW19NM60N
Description N-channel Power MOSFET
Feature STW19NM60N; STW19NM60N Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 .
Manufacture STMicroelectronics
Datasheet
Download STW19NM60N Datasheet




STMicroelectronics STW19NM60N
Contents
Contents
STW19NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 DocID024392 Rev 2



STMicroelectronics STW19NM60N
STW19NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS
VGS
ID
ID
IDM (1)
PTOT
IAR
EAS
dv/dt(2)
Drain-source voltage
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
600
± 25
13
8.2
52
110
4
350
15
TJ Operating junction temperature
Tstg Storage temperature
-55 to 150
1. Pulse width limited by safe operating area.
2. ISD 13 A, di/dt 400 A/µs, VDD 80 % V(BR)DSS, VDS(peak) V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Value
1.14
50
Unit
V
A
A
A
W
A
mJ
V/ns
°C
°C
Unit
°C/W
°C/W
DocID024392 Rev 2
3/13





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