N-channel Power MOSFET
STW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package
Datasheet - ...
Description
STW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package
Datasheet - production data
Features
3 2 1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
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3
Order code
VDS (@Tjmax)
STW19NM60N 650 V
RDS(on) max.
ID PTOT
0.285 Ω 13 A 110 W
Designed for automotive applications and AEC-Q101 qualified
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
!-V
Order codes STW19NM60N
Table 1. Device summary
Marking
Package
19NM60N
TO-247
Packaging Tube
October 2013
This is information on a product in full production.
DocID024392 Rev 2
1/13
www.st.com
13
Contents
Contents
STW19NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
...
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