N-channel Power MOSFET
STB27NM60ND, STW27NM60ND
Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2...
Description
STB27NM60ND, STW27NM60ND
Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages
Datasheet - production data
Features
TAB
3 1
D2PAK
TO-247
3 2 1
Figure 1. Internal schematic diagram
$4!"
' 3
!-V
Order codes VDS@ Tjmax RDS(on) max ID
STB27NM60ND STW27NM60ND
650 V
0.16 Ω 21 A
Designed for automotive applications and AEC-Q101 qualified
The worldwide best RDS(on)*area amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
Applications
Switching applications
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
Order codes STB27NM60ND STW27NM60ND
Table 1. Device summary
Marking
Packages
27NM60ND
D²PAK
27NM60ND
TO-247
October 2013
This is information on a product in full production.
DocID15406 Rev 4
Packaging Tape and reel
Tube
1/19
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Contents
Contents
STB27NM60ND, STW27NM60ND
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . ....
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