Power MOSFET. STL45N65M5 Datasheet

STL45N65M5 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STL45N65M5
STL45N65M5
N-channel 650 V, 0.075 Ω typ., 22.5 A MDmesh™ M5
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
5
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Features
Order code
STL45N65M5
VDS @
TJmax.
710 V
RDS(on)
max.
0.086 Ω
ID PTOT
22.5 A 160 W
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STL45N65M5
Table 1: Device summary
Marking
Package
45N65M5
PowerFLAT™ 8x8 HV
Packing
Tape and reel
October 2015
DocID023354 Rev 2
This is information on a product in full production.
1/16
www.st.com


STL45N65M5 Datasheet
Recommendation STL45N65M5 Datasheet
Part STL45N65M5
Description N-channel Power MOSFET
Feature STL45N65M5; STL45N65M5 N-channel 650 V, 0.075 Ω typ., 22.5 A MDmesh™ M5 Power MOSFET in a PowerFLAT™ 8x8 HV pac.
Manufacture STMicroelectronics
Datasheet
Download STL45N65M5 Datasheet




STMicroelectronics STL45N65M5
Contents
Contents
STL45N65M5
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 PowerFLAT 8x8 HV package information ....................................... 11
4.2 PowerFLAT 8x8 HV packing information ........................................ 13
5 Revision history ............................................................................ 15
2/16 DocID023354 Rev 2



STMicroelectronics STL45N65M5
STL45N65M5
1 Electrical ratings
Symbol
VDS
VGS
ID(1)
IDM(1)(2)
PTOT(1)
ID(3)
PTOT(3)
dv/dt(4)
Tstg
Tj
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Drain current (continuous) at Tamb = 25 °C
Drain current (continuous) at Tamb = 100 °C
Total dissipation at Tamb = 25 °C
Peak diode recovery voltage slope
Storage temperature
Operating junction temperature
Notes:
(1) The value is rated according to Rthj-case and limited by package.
(2) Pulse width limited by safe operating area.
(3) When mounted on a 1-inch² FR-4, 2oz Cu board.
(4) ISD ≤ 22.5 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.
Symbol
Rthj-case
Rthj-amb(1)
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Notes:
(1) When mounted on a 1-inch² FR-4, 2oz Cu board.
Symbol
IAR(1)
EAS(2)
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1) Pulse width limited by Tjmax.
(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Electrical ratings
Value
650
±25
22.5
18
90
160
3.8
2.4
2.8
15
-55 to 150
Unit
V
V
A
A
W
A
W
V/ns
°C
Value
0.78
45
Unit
°C/W
Value
8
810
Unit
A
mJ
DocID023354 Rev 2
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