Power MOSFET. STP13N80K5 Datasheet

STP13N80K5 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STP13N80K5
STB13N80K5, STF13N80K5,
STP13N80K5, STW13N80K5
N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5
Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
Datasheet - production data
TAB
D2PAK
TAB
3
2
1
TO-220FP
Features
Order code
VDS RDS(on) max. ID PTOT
STB13N80K5
190 W
STF13N80K5
STP13N80K5
STW13N80K5
800 V
0.45 Ω
35 W
12 A
190 W
TO-220
3
2
1
TO-247
3
2
1
Figure 1: Internal schematic diagram
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Order code
STB13N80K5
STF13N80K5
STP13N80K5
STW13N80K5
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Marking
Package
Packing
D²PAK
Tape and reel
13N80K5
TO-220FP
TO-220
Tube
TO-247
September 2017
DocID024348 Rev 4
This is information on a product in full production.
1/23
www.st.com


STP13N80K5 Datasheet
Recommendation STP13N80K5 Datasheet
Part STP13N80K5
Description N-channel Power MOSFET
Feature STP13N80K5; STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 Ω typ., 12 A SuperMESH™ 5 Power.
Manufacture STMicroelectronics
Datasheet
Download STP13N80K5 Datasheet




STMicroelectronics STP13N80K5
Contents
Contents
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ................................................................................... 10
4 Package information ..................................................................... 11
4.1 D²PAK (TO-263) type A package information ................................. 11
4.2 TO-220FP package information ...................................................... 14
4.3 TO-220 type A packing information................................................. 16
4.4 TO-247 package information........................................................... 18
4.5 D²PAK type A packing information .................................................. 20
5 Revision history ............................................................................ 22
2/23 DocID024348 Rev 4



STMicroelectronics STP13N80K5
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Electrical ratings
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Value
Parameter
D²PAK, TO-220,
TO-247
TO-220FP
Unit
VGS
ID
ID
IDM(2)
PTOT
VISO
dv/dt (3)
dv/dt (4)
Tj
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat-sink
(t = 1 s, TC = 25 °C)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
±30
12
7.6
48
190
12 (1)
7.6 (1)
48 (1)
35
V
A
A
A
W
2500
V
4.5
50
-55 to 150
V/ns
°C
Notes:
(1)Limited by package.
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 12 A, di/dt =100 A/μs; VDS peak < V(BR)DSS.
(4)VDS ≤ 640 V.
Symbol
Rthj-case
Rthj-amb
Rthj-pcb(1)
Parameter
Table 3: Thermal data
Value
D²PAK TO-220 TO-220FP
Thermal resistance junction-case
0.66 3.57
Thermal resistance junction-ambient
62.5
Thermal resistance junction-pcb
30
TO-247
0.66
50
Unit
°C/W
°C/W
°C/W
Notes:
(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
4
148
Unit
A
mJ
DocID024348 Rev 4
3/23







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