STF20N65M5

STF20N65M5, STFI20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in TO-220FP and I2PAKFP packages Datasheet — production data Features Order codes STF20N65M5 STFI20N65M5 VDS @ TJmax RDS(on) max 710 V 0.19 Ω ID 18 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 3 2 1 TO-220FP 123 I2PAKFP (TO-281) Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order codes STF20N65M5 STFI20N65M5 Marking 20N65M5 Package TO-220FP I2PAKFP (TO-281) February 2013 This is information on a product in full production. Doc ID 024223 Rev 1 Packaging Tube 1/15 www.st.com 15 Contents Contents STF20N65M5, STFI20N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ...