Power MOSFET. STFI20N65M5 Datasheet

STFI20N65M5 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STFI20N65M5
STF20N65M5, STFI20N65M5,
STFW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5
Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages
Datasheet - production data
TO-220FP
I2PAKFP (TO-281)
TO-3PF
3
2
1
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
Features
Order code
STF20N65M5
STFI20N65M5
STFW20N65M5
VDS @ TJmax
710 V
RDS(on) max
0.190 Ω
ID
18 A
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
These devices are N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting products offer extremely low on-
resistance, making them particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STF20N65M5
STFI20N65M5
STFW20N65M5
AM01475v1_noZen_no Tab
Table 1: Device summary
Marking
Package
TO-220FP
20N65M5
I²PAKFP (TO-281)
TO-3FP
Packaging
Tube
March 2017
DocID024223 Rev 3
This is information on a product in full production.
1/18
www.st.com


STFI20N65M5 Datasheet
Recommendation STFI20N65M5 Datasheet
Part STFI20N65M5
Description N-channel Power MOSFET
Feature STFI20N65M5; STF20N65M5, STFI20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in TO-220FP and .
Manufacture STMicroelectronics
Datasheet
Download STFI20N65M5 Datasheet




STMicroelectronics STFI20N65M5
Contents
Contents
STF20N65M5,STFI20N65M5,STFW20N65M5
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curve)........................................................ 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 TO-220FP package information ...................................................... 11
4.2 I²PAKFP (TO-281) package information ......................................... 13
4.3 TO-3PF package information .......................................................... 15
5 Revision history ............................................................................ 17
2/18 DocID024223 Rev 3



STMicroelectronics STFI20N65M5
STF20N65M5,STFI20N65M5,STFW20N65M5
Electrical ratings
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Value
Parameter
TO-220FP,
I²PAKFP
TO-3PF
Unit
VGS
ID
ID
IDM (2)
PTOT
dv/dt (3)
VISO(4)
Tstg
Tj
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three leads
to external heat sink (t = 1 s; TC = 25 °C)
Storage temperature range
Operating junction temperature range
±25
18(1)
11.3(1)
36(1)
30 48
15
2500
3500
- 55 to 150
V
A
A
A
W
V/ns
V
°C
Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width limited by safe operating area
(3)ISD ≤ 18 A, di/dt = 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
(4)VDS ≤ 520 V
Symbol
Table 3: Thermal data
Parameter
Rthj-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
TO-220FP,
I²PAKFP
TO-3PF
4.17 2.6
62.5 50
Unit
°C/W
°C/W
Symbol
Table 4: Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax )
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
4
270
Unit
°C/W
mJ
DocID024223 Rev 3
3/18







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