Power MOSFET. STP25N80K5 Datasheet

STP25N80K5 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STP25N80K5
STB25N80K5, STF25N80K5,
STP25N80K5, STW25N80K5
N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs
in D2PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet production data
TAB
3
1
D2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
' 7$%
Features
Order code
VDS @
TJmax
RDS(on)
max
ID
PTOT
STB25N80K5
250 W
STF25N80K5
STP25N80K5
STW25N80K5
800 V
< 0.260 19.5 A
40 W
250 W
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
* 
6 
AM01476v1
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STB25N80K5
STF25N80K5
STP25N80K5
STW25N80K5
Table 1. Device summary
Marking
Package
D2PAK
25N80K5
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
October 2014
This is information on a product in full production.
DocID023466 Rev 3
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STP25N80K5 Datasheet
Recommendation STP25N80K5 Datasheet
Part STP25N80K5
Description N-channel Power MOSFET
Feature STP25N80K5; STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power.
Manufacture STMicroelectronics
Datasheet
Download STP25N80K5 Datasheet




STMicroelectronics STP25N80K5
Contents
Contents
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 STB25N80K5, D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 STF25N80K5, TO-220FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 STP25N80K5, TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.4 STW25N80K5, TO-247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
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STMicroelectronics STP25N80K5
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D2PAK,
TO-220, TO-247
TO-220FP
VGS
ID
ID
IDM (2)
PTOT
IAR
EAS
Viso
dv/dt (3)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Max current during repetitive or single
pulse avalanche
(pulse width limited by Tjmax )
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Peak diode recovery voltage slope
Tj Operating junction temperature
Tstg Storage temperature
1. Limited by package.
2. Pulse width limited by safe operating area.
3. ISD 19.5 A, di/dt 100 A/µs, VPeak V(BR)DSS
19.5
12.3
78
250
± 30
19.5(1)
12.3 (1)
78 (1)
40
6.5
200
2500
6
-55 to 150
Unit
V
A
A
A
W
A
mJ
V
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 TO-247 D2PAK TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
62.5
0.5
50
30
3.1
62.5 °C/W
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