JCS18N50WH

N N- CHANNEL MOSFET R JCS18N50WH MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 19 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 25pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product Package ORDER MESSAGE Order codes Marking JCS18N50WH-O-W-N-B JCS18N50WH Package TO-247 Halogen Free NO Packaging Device Weight Tube 5.20g(typ) ：201105A 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ （ 1） Drain Current -pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy（note 2） EAS （ 1） Avalanche Current （note 1） IAR （ 1） Repetitive Avalanche Current （note 1） EAR （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature JCS18N50WH Value 500 19.0* 12.0* 76* ±30 1002 19.0 20.8 4.5 Unit V A A A V mJ A mJ V/ns 208 1.67 -55～+150 300 W W/℃ ℃ ℃ ：201105A 2/8 R ELECTRICAL CHARACTERISTIC JCS18N50WH Parameter Off –Characteristics － Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain...