APM2306

APM2306 N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3.5A, RDS(ON)=70mΩ(typ.) @ V =5V GS RDS(ON)=42mΩ(typ.) @ VGS=10V Super High Dense Cell Design High Power and Current Handling Capability SOT-23 Package Applications Switching Regulators Switching Converters D 3 12 GS Top View of SOT-23 Ordering and Marking Information APM2306 H andling C ode Temp. Range Package Code Package Code A : SOT-23 O perating Junction Tem p. R ange C : -55 to 1 50°C H andling C ode TR : Tape & Reel APM2306 A : M06X X - Date Code Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS VGSS Drain-Source Voltage Gate-Source Voltage 30 V ±20 ID Maximum Pulsed Drain Current ( pulse width ≤ 300µs) IDM Maximum Drain Current – Pulsed 3.5 16 A PD Maximum Power Dissipation TA=25°C TA=100°C 1.25 0.5 W W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C AcuNsPtEoCmererssetroveosbttahien right to make changes to improve reliability the latest version of relevant information to or manufacturability verify before placing without orders. notice, and advise Copyright  ANPEC Electronics Corp. Rev. A.2 - Aug., 2002 1 www.anpec.com.tw APM2306 Electrical Characteristics (TA= 25°C unless otherwise noted) Symbol Parameter Test Condition Static BVDSS IDSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage IGSS Ga...