P-Channel MOSFET
APM2307
P-Channel Enhancement Mode MOSFET
Features
• -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V
RDS(ON)=140mΩ(typ.) @ V...
Description
APM2307
P-Channel Enhancement Mode MOSFET
Features
-30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V
RDS(ON)=140mΩ(typ.) @ VGS=-4.5V
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged SOT-23 Package
Applications
Pin Description
D
GS Top View of SOT-23
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered Systems.
Ordering and Marking Information
APM2307
H andling C ode Temp. Range Package Code
Package Code A : SOT-23
O peration Junction Tem p. R ange C : -5 5 to 1 5 0° C
H andling C ode TR : Tape & Reel
APM2307 A :
M07X
X - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
-30 ±20 V
ID* Maximum Drain Current – Continuous IDM Maximum Drain Current – Pulsed
-3 -12 A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003
1
www.anpec.com.tw
APM2307
Absolute Maximum Ratings Cont. (TA = 25°C unless otherwise noted)
Symbol PD
TJ TSTG RθjA
Parameter Maximum Power Dissipation TA=25°C
TA=100°C Maximum Junction Temperature
Storage Temperature Range Thermal Resistance – Junction to Ambient
Rating 1.25 0.5 150
-55 to 150 100
Unit
W
°C °C °C/W
Electrical Chara...
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