APM2321

APM2321 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-0.9A , RDS(ON)=370mΩ(typ.) @ V =-4.5V GS RDS(ON)=560mΩ(typ.) @ V =-2.5V GS Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package Applications D GS Top View of SOT-23 S Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G Ordering and Marking Information D P-Channel MOSFET APM2321 H andling C ode Temp. Range Package Code Package Code A : SOT-23 O perating Junction Tem p. R ange C : -55 to 1 50°C H andling C ode TR : Tape & Reel APM2321A : M21X X - Date Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed -20 V ±10 -0.9 A -3.6 * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 1 www.anpec.com.tw APM2321 Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) Symbol PD TJ TSTG RθjA Parameter Maximum Power Dissipation TA=25°C TA=100°C Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient Rating 1.25 0.5 150 -55 to...