N-Channel MOSFET
APM2506NU
Features
z 25V/60A, RDS(ON)= 5mΩ (typ.) @ VGS= 10V RDS(ON)= 7mΩ (typ.) @ VGS= 4.5V
z Super High Dense Cell Des...
Description
APM2506NU
Features
z 25V/60A, RDS(ON)= 5mΩ (typ.) @ VGS= 10V RDS(ON)= 7mΩ (typ.) @ VGS= 4.5V
z Super High Dense Cell Design z Avalanche Rated z Reliable and Rugged
N-Channel Enhancement Mode MOSFET
Pin Description
1 2
Pin 3 D
3 Pin 1 G
S Pin 2
Applications
z Power Management in Desktop Computer or DC/DC Converters
Ordering and Marking Information
APM2506N
Lead Free Code Handing Code Temp. Range Package Code
Package Code U : TO-252
Operating Junction Temp. Range C : -55 to 150°C
Handling Code TU : Tube TR : Tape & Reel
Lead Free Code L : Lead Free Device Blank : Original Device
APM2506N U:
APM2506N XXXXX
XXXXX – Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright©ANPEC Electronics Corp. Rev. B.1 - Oct., 2003
1
www.anpec.com.tw
APM2506NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA = 25°C)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
TC=25°C
TC=100°C
ID Continuous Drain Current
TC=25°C TC=100°C
PD Maximum Power Dissipation
TC=25°C TC=100°C
RθJC Thermal Resistance-Junction to Case
Mounted on PCB of 1in2 pad area
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID Continuous Drain Current
TA=25°C TA=100°C
PD Ma...
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