Junction MOSFET. APT53N60BC6 Datasheet

APT53N60BC6 MOSFET. Datasheet pdf. Equivalent


Microsemi APT53N60BC6
APT53N60BC6
APT53N60SC6
600V 53A 0.070Ω
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
• Popular TO-247 or Surface Mount D3 package.
TO-247
D3PAK
D
G
S
MAXIMUM RATINGS
All Ratings per die: TC = 25°C unless otherwise specied.
Symbol Parameter
APT53N60B_SC6
UNIT
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 2
Repetitive Avalanche Energy 2 ( Id =9.3A, Vdd = 50V )
Single Pulse Avalanche Energy ( Id = 9.3A, Vdd = 50V )
600
53
34
159
±20
417
- 55 to 150
260
9.3
1.72
1135
Volts
Amps
Volts
Watts
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
600
RDS(on) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 25.8A)
0.070
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
25
250
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.72mA)
2.5 3 3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
Microsemi Website - http://www.microsemi.com


APT53N60BC6 Datasheet
Recommendation APT53N60BC6 Datasheet
Part APT53N60BC6
Description Super Junction MOSFET
Feature APT53N60BC6; APT53N60BC6 APT53N60SC6 600V 53A 0.070Ω COOLMOS Power Semiconductors Super Junction MOSFET • Ultr.
Manufacture Microsemi
Datasheet
Download APT53N60BC6 Datasheet




Microsemi APT53N60BC6
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 4
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
tf Fall Time
Eon Turn-on Switching Energy 5
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy 5
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 53A @ 25°C
INDUCTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 53A @ 125°C
RG = 4.3Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 53A, RG = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 53A, RG = 4.3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
/dv
dt
t rr
Q rr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 3 (VGS = 0V, IS = -53A)
Peak
Diode
Recovery
/dv
dt
6
Reverse Recovery Time
(IS
=
-53A,
/di
dt
=
100A/μs)
Reverse Recovery Charge
(IS
=
-53A,
/di
dt
=
100A/μs)
Peak Recovery Current
(IS
=
-53A,
/di
dt
=
100A/μs)
Tj = 25°C
Tj = 25°C
Tj = 25°C
MIN
MIN
APT53N60B_SC6
TYP MAX UNIT
4020
3545
pF
330
154
26 nC
82
14
36
151 ns
74
960
873
1478
995
μJ
TYP MAX UNIT
46
Amps
159
0.9 1.2 Volts
15 V/ns
795 ns
25 μC
58 Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN TYP MAX
RθJC Junction to Case
0.30
RθJA Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction temperature
4 See MIL-STD-750 Method 3471
2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specications and information contained herein.
0.35
0.30 D = 0.9
UNIT
°C/W
0.25
0.7
0.20
0.15
0.10
0.05
0
10-5
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
0.1 1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration



Microsemi APT53N60BC6
Typical Performance Curves
140
15V
120
100
80
60
40
20
10V
7.0V
6.5V
6.0V
5.5V
5V
4.5V
0
05
10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
3.00
NORMALIZED TO
2.50
VGS = 10V @ 26.5A
2.00
1.50
1.00
VGS = 10V
VGS = 20V
0.50
0
0
1.20
30 60 90 120 150
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70 -50
0 50 100 150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
80
VDS> ID (ON) x RDS (ON)MAX.
70
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
APT53N60B_SC6
50
40
30
20
10
0
0
60
TJ= 25°C
TJ= 125°C
TJ= -55°C
2
46
8 10
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
50
40
30
20
10
0
25
50
75 100 125
150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
2.50
2.00
1.50
1.00
0.50
0
-50 0 50 100 150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
1000
100
10
10ms
100µs
1ms
100ms
1
0.1
1
10 100 800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area







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