Power MOSFET. APT1204R7BFLL Datasheet

APT1204R7BFLL MOSFET. Datasheet pdf. Equivalent


Microsemi APT1204R7BFLL
APT1204R7BFLL
APT1204R7SFLL
1200V 3.5A 4.700
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
TO-247
D3PAK
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Increased Power Dissipation
D
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT1204R7B_SFLL
1200
3.5
14
±30
±40
135
1.08
-55 to 150
300
3.5
10
425
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 1.75A)
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
MIN TYP MAX UNIT
1200
Volts
4.70 Ohms
250
1000
µA
±100 nA
3 5 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com


APT1204R7BFLL Datasheet
Recommendation APT1204R7BFLL Datasheet
Part APT1204R7BFLL
Description Power MOSFET
Feature APT1204R7BFLL; APT1204R7BFLL APT1204R7SFLL 1200V 3.5A 4.700Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generati.
Manufacture Microsemi
Datasheet
Download APT1204R7BFLL Datasheet




Microsemi APT1204R7BFLL
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 10V
VDD = 600V
ID = 3.5A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 600V
ID = 3.5A @ 25°C
RG = 1.6
INDUCTIVE SWITCHING @ 25°C
VDD = 800V, VGS = 15V
ID = 3.5A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 800V, VGS = 15V
ID = 3.5A, RG = 4.3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID 3.5A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -ID 3.5A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -ID 3.5A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
IRRM
Peak Recovery Current
(IS = -ID 3.5A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
MIN
MIN
APT1204R7B_SFLL
TYP MAX UNIT
715
130 pF
36
31
4 nC
21
7
2 ns
20
24
115
23 µJ
135
25
TYP MAX UNIT
3.5 Amps
14
1.3 Volts
18 V/ns
250 ns
515
0.5 µC
1.1
8.3
11.5 Amps
TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.90
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 69.39mH, RG = 25, Peak IL = 3.5A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID3.5A di/dt 700A/µs VR 1200 TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1.0
0.80
0.9
0.60
0.7
0.40
0.20
0 10-5
0.5 Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0



Microsemi APT1204R7BFLL
Typical Performance Curves
Dissipated Power
(Watts)
TJ ( C)
TC ( C)
0.386
0.508
0.00336
0.0903
ZimEpXTedaarencthees:eCxtaesrenatol tshienrkm, al
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
10
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
6
4 TJ = -55°C
TJ = +125°C
2 TJ = +25°C
0
01 2 3 4 5 6 7 8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE4, TRANSFERCHARACTERISTICS
3.5
3
2.5
2
1.5
1
0.5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 1.75A
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APT1204R7 B_SFLL
8
7 VGS =15,10 & 8V
7V
6
5 6.5V
4
3 6V
2
5.5V
1
5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
NORMALIZED TO
VGS = 10V @ 1.75A
1.20
1.10
VGS=10V
1.00
0.90
VGS=20V
0.80 0
1.15
12 3 4 5
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
6
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)