APT97N65B2C6

COOLMOS Power Semiconductors Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated APT97N65B2C6 APT97N65LC6 650V 97A 0.041Ω Super Junction MOSFET APT97N65B2C6 T-Max® TO-264 APT97N65LC6 D Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. G S MAXIMUM RATINGS Symbol Parameter All Ratings per die: TC = 25°C unless otherwise specified. APT97N65B2_LC6 UNIT VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR Drain-Source Voltage Continuous Drain Current @ TC = 25°C 1 (assuming Rdson max = 0.041Ω) Continuous Drain Current @ TC = 100°C Pulsed Drain Current 2 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 2 Repetitive Avalanche Energy 3 ( Id = 13.4A, Vdd = 50V ) 650 97 62 291 ±20 862 -55 - to 150 260 13.4 2.96 Volts Amps Volts Watts °C Amps EAS Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V ) 1954 mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 650 RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 48.5A) 0.037 0.041 IDSS Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) Zero Gate Voltage D...