Junction MOSFET. APT97N65B2C6 Datasheet

APT97N65B2C6 MOSFET. Datasheet pdf. Equivalent


Microsemi APT97N65B2C6
COOLMOS
Power Semiconductors
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
APT97N65B2C6
APT97N65LC6
650V 97A 0.041Ω
Super Junction MOSFET
APT97N65B2C6
T-Max®
TO-264
APT97N65LC6
D
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings per die: TC = 25°C unless otherwise specied.
APT97N65B2_LC6
UNIT
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
IAR
EAR
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C 1 (assuming Rdson max = 0.041Ω)
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 2
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 2
Repetitive Avalanche Energy 3 ( Id = 13.4A, Vdd = 50V )
650
97
62
291
±20
862
-55 - to 150
260
13.4
2.96
Volts
Amps
Volts
Watts
°C
Amps
EAS Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V )
1954
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
650
RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 48.5A)
0.037 0.041
IDSS
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C)
25
250
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA)
2.5 3 3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
Microsemi Website - http://www.microsemi.com


APT97N65B2C6 Datasheet
Recommendation APT97N65B2C6 Datasheet
Part APT97N65B2C6
Description Super Junction MOSFET
Feature APT97N65B2C6; COOLMOS Power Semiconductors • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Q.
Manufacture Microsemi
Datasheet
Download APT97N65B2C6 Datasheet




Microsemi APT97N65B2C6
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 5
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
tf Fall Time
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 325V
ID = 97A @ 25°C
INDUCTIVE SWITCHING
VGS = 15V
VDD = 433V
ID = 97A @ 25°C
RG = 2.2Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 433V, VGS = 15V
ID = 97A, RG = 2.2Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 433V, VGS = 15V
ID =97A, RG = 2.2Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
/dv
dt
t rr
Q rr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 2 (Body Diode)
Diode Forward Voltage 4 (VGS = 0V, IS = -48.5A)
Peak
Diode
Recovery
/dv
dt
7
Reverse Recovery Time
(IS
=
-97A,
/di
dt
=
100A/μs)
Reverse Recovery Charge
(IS
=
-97A,
/di
dt
=
100A/μs)
Peak Recovery Current
(IS
=
-97A,
/di
dt
=
100A/μs)
Tj = 25°C
Tj = 25°C
Tj = 25°C
MIN
MIN
APT97N65B2_LC6
TYP MAX UNIT
7650
5045
pF
550
300
50 nC
160
25
60
275 ns
130
2860
3500
4030
3695
μJ
TYP MAX UNIT
97
291
Amps
0.9 1.2 Volts
50 V/ns
790 ns
19 μC
43 Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN TYP MAX
RθJC Junction to Case
0.145
RθJA Junction to Ambient
40
1 Continuous current limited by package lead temperature.
4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
2 Repetitive Rating: Pulse width limited by maximum junction temperature
5 See MIL-STD-750 Method 3471
3 Repetitive avalanche causes additional power losses that can be calculated as 6 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
7 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specications and information contained herein.
0.16
0.14
D = 0.9
0.12
0.10
0.08
0.06
0.04
0.02
0
10-5
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
UNIT
°C/W



Microsemi APT97N65B2C6
Typical Performance Curves
225 15V 10V
200
175
7V
150
125 6.5V
100 6V
75 5.5V
50 5V
25 4.5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
2.00
NORMALIZED TO
1.60
VGS = 10V @ 48.5A
1.20
0.80
VGS = 10V
VGS = 20V
0.40
0
0
1.20
50 100 150 200 250
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
0
50 100 150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
1.20
1.10
1.00
0.90
0.80
0.70
-50
0TC, Case T5e0mperature1(0°C0 )
150
FIGURE 8, Threshold Voltage vs Temperature
140
120
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
APT97N65B2_LC6
100
80
60
40
20
0
0
100
TJ= 25°C
TJ= 125°C
TJ= -55°C
12 3456 7
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
8
80
60
40
20
0 25
50 75 100 125 150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.00
2.50
2.00
1.50
1.00
0.50
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
1000
Rds On
100
10
1
10µs
100µs 1ms
10ms
100ms
0.10
1
10 100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area





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