APT20M38SVFR

200V 67A 0.038Ω APT20M38BVFR APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. BVFR TO-247 D3PAK SVFR Lower Leakage Avalanche Energy Rated D Faster Switching Fast Recovery Body Diode TO-247 or Surface Mount D3PAK Package G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT20M38B_SVFR(G) 200 67 268 ±30 ±40 370 2.96 -55 to 150 300 67 30 1300 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)...