APT20M45BVR

APT20M45BVR(G) 200V, 56A, 0.045Ω POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. APT20M45BVR(G) TO-247 D3 FEATURES Faster switching Lower Leakage 100% Avalanche tested Popular TO-247 Package RoHS compliant D G S Absolute Maximum Ratings Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. Ratings Unit VDSS ID IDM VGS VGSM PD Drain Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 200 Volts 56 Amps 224 ±30 Volts ±40 300 Watts 2.4 W/C° TJ, TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Avalanche Current 1 (Repetitive and Non-Repatitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 56 30 1300 °C Amps mJ Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Min BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 I )D[Cont.] Zero Gate Voltage Drain Current (VDS = V...