N-Channel MOSFET. APT23F60S Datasheet

APT23F60S MOSFET. Datasheet pdf. Equivalent


Microsemi APT23F60S
APT23F60B
APT23F60S
600V, 24A, 0.29Max, trr 220ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO-247
D3PAK
APT23F60B
APT23F60S
Single die FREDFET G
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
RθCS
TJ,TSTG
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Ratings
Unit
24
14
A
80
±30
V
615
mJ
11
A
Min Typ Max Unit
415 W
0.30
°C/W
0.11
-55
150
°C
300
0.22
6.2
oz
g
10 in·lbf
1.1 N·m
MicrosemiWebsite-http://www.microsemi.com


APT23F60S Datasheet
Recommendation APT23F60S Datasheet
Part APT23F60S
Description N-Channel MOSFET
Feature APT23F60S; APT23F60B APT23F60S 600V, 24A, 0.29Ω Max, trr ≤220ns N-Channel FREDFET Power MOS 8™ is a .
Manufacture Microsemi
Datasheet
Download APT23F60S Datasheet




Microsemi APT23F60S
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min Typ
VBR(DSS)
VBR(DSS)/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 11A
VGS = VDS, ID = 1mA
600
0.57
0.23
2.5
4
-10
IDSS Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT23F60B_S
Max Unit
V
V/°C
0.29
5V
mV/°C
250
1000
µA
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 11A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 11A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 11A
RG = 4.76 , VGG = 15V
Typ
22
4415
45
405
215
110
110
24
46
25
29
75
23
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
VSD Diode Forward Voltage
ISD = 11A, TJ = 25°C, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 11A 3
diSD/dt = 100A/µs
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
0.73
1.79
Irrm
dv/dt
Reverse Recovery Current
Peak Recovery dv/dt
VDD = 100V
TJ = 25°C
7.3
TJ = 125°C
10.2
ISD 11A, di/dt 1000A/µs, VDD =
TJ = 125°C
400V,
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 10.17mH, RG = 25, IAS = 11A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
24
80
1.0
220
400
20
A
V
ns
µC
A
V/ns
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -4.28E-8/VDS^2 + 1.80E-8/VDS + 6.71E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.



Microsemi APT23F60S
80
VGS = 10V
70
60
TJ = -55°C
50
TJ = 25°C
40
30
20
TJ = 150°C
10 TJ = 125°C
0
0 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
2.5 VGS = 10V @ 11A
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
35
30 TJ = -55°C
25 TJ = 25°C
TJ = 125°C
20
15
10
5
00 5 10 15 20 25
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 11A
14
12
VDS = 120V
10
VDS = 300V
8
6
VDS = 480V
4
2
0
0 20 40 60 80 100 120 140 160
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
35
TJ = 125°C
30
25
20
VGS= 7 &,10V
APT23F60B_S
6.5V
15
10 6V
5 5.5V
5V
0 0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
80
VDS> ID(ON) x RDS(ON) MAX.
70
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
TJ = -55°C
40
TJ = 25°C
30
20 TJ = 125°C
10
0 0 1 2 3 4 5 6 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
6,000
Ciss
1000
100 Coss
Crss
10 0 100 200 300 400 500 600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
80
70
60
50
TJ = 25°C
40
30
20 TJ = 150°C
10
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage





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