N-channel MOSFET. STP240N10F7 Datasheet

STP240N10F7 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STP240N10F7
STP240N10F7
N-channel 100 V, 2.85 mtyp., 110 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
TAB
3
2
1
TO-220
Features
Order code
STP240N10F7
VDS RDS(on)max.
ID
100 V
3.2 m
110 A
Ultra low on-resistance
100% avalanche tested
Applications
High current switching applications
Figure 1. Internal schematic diagram
' 7$%
Description
This N-channel Power MOSFET utilizes the
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
* 
6 
$0Y
Order code
STP240N10F7
Table 1. Device summary
Marking
Package
240N10F7
TO-220
Packaging
Tube
July 2014
This is information on a product in full production.
DocID023934 Rev 3
1/13
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STP240N10F7 Datasheet
Recommendation STP240N10F7 Datasheet
Part STP240N10F7
Description N-channel MOSFET
Feature STP240N10F7; STP240N10F7 N-channel 100 V, 2.85 mΩ typ., 110 A STripFET™ F7 Power MOSFET in a TO-220 package Data.
Manufacture STMicroelectronics
Datasheet
Download STP240N10F7 Datasheet




STMicroelectronics STP240N10F7
Contents
Contents
STP240N10F7
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 DocID023934 Rev 3



STMicroelectronics STP240N10F7
STP240N10F7
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS Drain-source voltage
VGS
ID (1)
ID (1)
IDM (2)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
EAS(3)
Total dissipation at TC = 25°C
Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj=25°C, Id=45A, Vdd=50V
100
± 20
110
110
440
300
500
- 55 to 175
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
max
Value
0.5
62.5
Unit
V
V
A
A
A
W
mJ
°C
Unit
°C/W
°C/W
DocID023934 Rev 3
3/13
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