APT77N60BC6

APT77N60BC6 APT77N60SC6 600V 77A 0.041Ω COOLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package. TO-247 D3PAK D G S MAXIMUM RATINGS All Ratings per die: TC = 25°C unless otherwise specified. Symbol Parameter APT77N60B_SC6 UNIT VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 2 Repetitive Avalanche Energy 2 ( Id =13.4A, Vdd = 50V ) Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V ) 600 77 49 272 ±20 481 - 55 to 150 300 13.4 2.96 1954 Volts Amps Volts Watts °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 600 RDS(on) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 44.4A) .037 .041 IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 25°C) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 150°C) 25 250 IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA) 2.5 3 3.6 CAUTION: These Devices are Sensitive to ...