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APT75F50B2 Dataheets PDF



Part Number APT75F50B2
Manufacturers Microsemi
Logo Microsemi
Description N-Channel MOSFET
Datasheet APT75F50B2 DatasheetAPT75F50B2 Datasheet (PDF)

APT75F50B2 APT75F50L 500V, 75A, 0.075Ω Max, trr ≤310ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switch.

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APT75F50B2 APT75F50L 500V, 75A, 0.075Ω Max, trr ≤310ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® TO-264 APT75F50B2 APT75F50L Single die FREDFET G D S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol Parameter ID Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C IDM Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic PD RθJC RθCS TJ,TSTG Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264Package), 4.40 or M3 screw Ratings Unit 75 47 A 230 ±30 V 1580 mJ 37 A Min Typ 0.11 -55 0.22 6.2 Max 1040 0.12 150 300 10 1.1 Unit W °C/W °C oz g in·lbf N·m MicrosemiWebsite-http://www.microsemi.com 050-8126 Rev C 05-2009 Static Characteristics TJ = 25°C unless otherwise specified APT75F50B2_L Symbol Parameter Test Conditions Min Typ Max Unit VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 37A VGS = VDS, ID = 2.5mA 500 0.60 0.064 2.5 4 -10 0.075 5 V V/°C Ω V mV/°C IDSS Zero Gate Voltage Drain Current VDS = 500V VGS = 0V TJ = 25°C TJ = 125°C 250 1000 µA IGSS Gate-Source Leakage Current VGS = ±30V ±100 nA Dynamic Characteristics Symbol gfs Ciss Crss Coss Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance TJ = 25°C unless otherwise specified Test Conditions Min VDS = 50V, ID = 37A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Co(er) 5 Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related VGS = 0V, VDS = 0V to 333V Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 37A, VDS = 250V Resistive Switching VDD = 333V, ID = 37A RG = 2.2Ω 6 , VGG = 15V Typ 55 11600 160 1250 725 365 290 65 130 45 55 120 39 Max Unit S pF nC ns Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ MOSFET symbol showing the integral reverse p-n junction diode (body diode) D G S ISD = 37A, TJ = 25°C, VGS = 0V ISD = 37A 3 TJ = 25°C TJ = 125°C TJ = 25°C 1.48 VDD = 100V diSD/dt = 100A/µs TJ = 125°C TJ = 25°C 3.85 11.3 TJ = 125°C 16.6 ISD ≤ 37A, di/dt ≤1000A/µs, VDD = TJ = 125°C 333V, Max 75 230 1.0 310 570 20 Unit A V ns µC A V/ns 050-8126 Rev C 05-2009 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 2.31mH, RG = 25Ω, IAS = 37A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS^2 + 5.51E-8/VDS + 2.03E-10. 6 RG is external gate resistance, not including internal gate.


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