N-Channel MOSFET. APT75F50L Datasheet

APT75F50L MOSFET. Datasheet pdf. Equivalent


Microsemi APT75F50L
APT75F50B2
APT75F50L
500V, 75A, 0.075Max, trr 310ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
T-Max®
TO-264
APT75F50B2 APT75F50L
Single die FREDFET G
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
RθCS
TJ,TSTG
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-264Package), 4.40 or M3 screw
Ratings
Unit
75
47
A
230
±30
V
1580
mJ
37
A
Min Typ
0.11
-55
0.22
6.2
Max
1040
0.12
150
300
10
1.1
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
MicrosemiWebsite-http://www.microsemi.com


APT75F50L Datasheet
Recommendation APT75F50L Datasheet
Part APT75F50L
Description N-Channel MOSFET
Feature APT75F50L; APT75F50B2 APT75F50L 500V, 75A, 0.075Ω Max, trr ≤310ns N-Channel FREDFET Power MOS 8™ is .
Manufacture Microsemi
Datasheet
Download APT75F50L Datasheet




Microsemi APT75F50L
Static Characteristics
TJ = 25°C unless otherwise specified
APT75F50B2_L
Symbol Parameter
Test Conditions
Min Typ Max Unit
VBR(DSS)
VBR(DSS)/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 37A
VGS = VDS, ID = 2.5mA
500
0.60
0.064
2.5
4
-10
0.075
5
V
V/°C
V
mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
TJ = 25°C
TJ = 125°C
250
1000
µA
IGSS Gate-Source Leakage Current
VGS = ±30V
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 37A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 333V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 37A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 37A
RG = 2.26 , VGG = 15V
Typ
55
11600
160
1250
725
365
290
65
130
45
55
120
39
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irrm Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min Typ
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 37A, TJ = 25°C, VGS = 0V
ISD = 37A 3
TJ = 25°C
TJ = 125°C
TJ = 25°C
1.48
VDD = 100V
diSD/dt = 100A/µs
TJ = 125°C
TJ = 25°C
3.85
11.3
TJ = 125°C
16.6
ISD 37A, di/dt 1000A/µs, VDD =
TJ = 125°C
333V,
Max
75
230
1.0
310
570
20
Unit
A
V
ns
µC
A
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 2.31mH, RG = 25, IAS = 37A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS^2 + 5.51E-8/VDS + 2.03E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.



Microsemi APT75F50L
300
VGS = 10V
250
200
150
TJ = -55°C
TJ = 25°C
100
50 TJ = 150°C
TJ = 125°C
00 5 10 15 20 25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
2.5
NORMALIZED TO
VGS = 10V @ 37A
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
100
TJ = -55°C
80
TJ = 25°C
60
TJ = 125°C
40
20
00 10 20 30 40 50 60 70 80
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 37A
14
12
VDS = 100V
10
VDS = 250V
8
6
4 VDS = 400V
2
00 50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
140
TJ = 125°C
120
100
APT75F50B2_L
VGS= 7 & 10V
6.5V
80 6V
60
5.5V
40
20 5V
0 0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
250
200
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
TJ = -55°C
100 TJ = 25°C
TJ = 125°C
50
0 0 1 2 3 4 5 6 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
10,000
Ciss
1000
100
Coss
Crss
10
0
100 200 300 400 500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
200
180
160
140
120
100 TJ = 25°C
80
60 TJ = 150°C
40
20
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage







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