N-Channel MOSFET. APT29F100L Datasheet

APT29F100L MOSFET. Datasheet pdf. Equivalent


Microsemi APT29F100L
APT29F100B2
APT29F100L
1000V, 30A, 0.44Ω Max, trr 270ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
T-Ma x TM
TO-264
APT29F100B2 APT29F100L
D
Single die FREDFET G
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Ratings
30
19
120
±30
1875
16
Unit
A
V
mJ
A
Min Typ Max Unit
1040 W
0.12
°C/W
0.11
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com


APT29F100L Datasheet
Recommendation APT29F100L Datasheet
Part APT29F100L
Description N-Channel MOSFET
Feature APT29F100L; APT29F100B2 APT29F100L 1000V, 30A, 0.44Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8™ is a high .
Manufacture Microsemi
Datasheet
Download APT29F100L Datasheet




Microsemi APT29F100L
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
VBR(DSS)
VBR(DSS)/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 16A
VGS = VDS, ID = 2.5mA
1000
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 1000V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT29F100B2_L
Typ Max Unit
V
1.15 V/°C
0.37 0.44
Ω
45V
-10 mV/°C
250
1000
μA
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specied
Test Conditions
Min
VDS = 50V, ID = 16A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 667V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 16A,
VDS = 500V
Resistive Switching
VDD = 667V, ID = 16A
RG = 2.2Ω 6 , VGG = 15V
Typ
34
8500
115
715
290
150
260
46
125
39
35
130
33
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 16A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 16A 3
diSD/dt = 100A/μs
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
ISD 16A, di/dt 1000A/μs, VDD = 667V,
TJ = 125°C
30
A
120
1.1
230 270
500 640
13
35
11
15
V
ns
μC
A
25 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 14.65mH, RG = 25Ω, IAS = 16A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.



Microsemi APT29F100L
80
VGS = 10V
70
60
TJ = -55°C
50
40
TJ = 25°C
30
20
10 TJ = 125°C
TJ = 150°C
0
0 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 16A
2.5
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
45
40
35
TJ = -55°C
30
TJ = 25°C
25
TJ = 125°C
20
15
10
5
0
0 4 8 12 16
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 16A
14
20
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
0
0 50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
30
TJ = 125°C
25
20
APT29F100B2_L
VGS= 6, 7, 8 & 9V
15
5V
10
5
4.5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
120
100
VDS> ID(ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
TJ = -55°C
60
TJ = 25°C
40
TJ = 125°C
20
0
0
20,000
10,000
1 2 3 4 56 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
Ciss
1000
Coss
100
Crss
10
0 200 400 600 800 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
120
100
80
60
TJ = 25°C
40
TJ = 150°C
20
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage







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