APT66M60B2

APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-Ma x TM TO-264 APT66M60B2 APT66M60L D Single die MOSFET G S FEATURES Fast switching with low EMI/RFI Low RDS(on) Ultra low Crss for improved noise immunity Low gate charge Avalanche energy rated RoHS compliant TYPICAL APPLICATIONS PFC and other boost converter Buck converter Two switch forward (asymmetrical bridge) Single switch forward Flyback Inverters Absolute Maximum Ratings Symbol Parameter ID Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C IDM Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic PD RθJC Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance RθCS TJ,TSTG Case to Sink Thermal Resistanc...