Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC...
Normally – OFF Silicon Carbide Junction
Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth
Package
RoHS Compliant D
GA10JT12-247
VDS RDS(ON) ID (Tc = 25°C) ID (Tc > 125°C) hFE (Tc = 25°C)
= = = = =
1200 V 100 mΩ 25 A 10 A 98
G DS
TO-247
Applications
Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Static Electrical Characteristics....................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...................................