Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423...
Transistor
2SB1030, 2SB1030A
Silicon
PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423 and 2SD1423A
s Features
q Optimum for high-density mounting. q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
VCBO
VCEO
VEBO ICP IC PC Tj Tstg
Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150
–55 ~ +150
Unit
V
V
V A A mW ˚C ˚C
4.0±0.2
Unit: mm
3.0±0.2
15.6±0.5
+0.2 0.45–0.1 0.7±0.1 2.0±0.2
marking 123
1.27 1.27 2.54±0.15
1:Emitter 2:Collector 3:Base
EIAJ:SC–72 New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base 2SB1030
voltage
2SB1030A
Collector to emitter 2SB1030
voltage
2SB1030A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Transition frequency Collector output capacitance
Symbol ICBO ICEO
VCBO
VCEO
VEBO hFE1*1 hFE2 VCE(sat) fT Cob
Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S 170 ~ 340
min typ ma...
